MCR8SN SCR-module Spec

MCR8SN ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum average on-state current (I_T(AVR)): 1000 A
   Non repetitive surge peak on-state current (I_TSM): 28000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.05 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.95 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 200 mA

 

MCR8SN Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MCR8SN Spec

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Description

MCR8SD, MCR8SM, MCR8SN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever http://onsemi.com half-wave, silicon gate-controlled devices are needed. SCRs Features 8 AMPERES RMS • Sensitive Gate Allows Triggering by Microcontrollers and other 400 thru 800 VOLTS Logic Circuits • Blocking Voltage to 800 V G �