MCRN100-6 SCR-module DATASHEET

MCRN100-6 ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum average on-state current (I_T(AVR)): 110 A
   Non repetitive surge peak on-state current (I_TSM): 2800 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.19 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 2.68 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 150 mA

MCRN100-6 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

MCRN100-6 Datasheet

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Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Thyristors SOT-89-3L MCRN100- 6,- 8 FEATURES 1.GATE Current-IGT : 200 µA 2.ANODE ITRMS : 0.8 A 3.KATHODE VRRM/ VDRM : MCRN100-6: 400 V MCRN100-8: 600 V Operating and storage junction temperature range TJ，Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified） Parameter Symbol Test conditions Min Max Unit * On state voltage VTM ITM=1A

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. MCRN100-6 Datasheet