MFA110 SCR-module DATASHEET

MFA110 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum average on-state current (I_T(AVR)): 160 A
   Non repetitive surge peak on-state current (I_TSM): 6000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.17 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.9 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 150 mA

 

MFA110 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MFA110 Datasheet

Page #1

Page #2

Description

MFC110 MFA110 MFK110 MFX110 Thyristor/Diode Modules Features：  Isolated mounting base 3600V~  Pressure contact technology with IT(AV) 110A Increased power cycling capability VDRM/VRRM 2600~3600V  Space and weight savings Typical Applications ITSM 2.8A×103  AC/DC Motor drives I2t 39A2 S*103  Various rectifiers  DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sine wave 50Hz IT(AV