All Transistors. SCR. MFA160 Datasheet

 

MFA160 SCR-module DATASHEET

MFA160 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum average on-state current (IT(AVR)): 250 A
   Non repetitive surge peak on-state current (ITSM): 9000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.11 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 2.63 V
   Triggering gate current (IGT): 180 mA
   Holding current (IH): 150 mA

 

MFA160 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MFA160 Datasheet

Page #1

MFA160
 datasheet

Page #2

MFA160
 datasheet #2

Description

MFC160 MFA160 MFK160 MFX160 Thyristor/Diode Modules Features:  Isolated mounting base 3000V~  Pressure contact technology with IT(AV) 160A Increased power cycling capability VDRM/VRRM 1900~2500V  Space and weight savings Typical Applications ITSM 6.0A×103  AC/DC Motor drives I2t 180A2 S*103  Various rectifiers  DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sine wave 50Hz IT(A

 
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