MFA55 SCR-module DATASHEET
MFA55 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum average on-state current (IT(AVR)): 70 A
Non repetitive surge peak on-state current (ITSM): 1700 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.39 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.93 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 150 mA
MFA55 Datasheet
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Description
MFC55 MFA55 MFK55 MFX55 Thyristor/Diode Modules Features: Isolated mounting base 3000V~ Pressure contact technology with IT(AV) 55A Increased power cycling capability VDRM/VRRM 1900~2500V Space and weight savings Typical Applications ITSM 1.50×103 AC/DC Motor drives I2t 11.3A2 S*103 Various rectifiers DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sine wave 50Hz IT(AV) M
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |