All Transistors. SCR. MFC1200 Datasheet

 

MFC1200 SCR-module DATASHEET

MFC1200 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum average on-state current (IT(AVR)): 182 A
   Non repetitive surge peak on-state current (ITSM): 7000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.16 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 1.84 V
   Triggering gate current (IGT): 150 mA
   Holding current (IH): 150 mA

 

MFC1200 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MFC1200 Datasheet

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MFC1200
 datasheet

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MFC1200
 datasheet #2

Description

MFC1200 MFA1200 MFK1200 MFX1200 Thyristor/Diode Modules Features:  Isolated mounting base 2500V~ IT(AV) 1200A  Pressure contact technology with Incrtased power cycling capability VDRM/VRRM 600~1800V  Space and weight savings ITSM 34 KA Typical Applications: I2t 5780 103A2S  AC/DC Motor drives  Various rectifiers  DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sine wave 50Hz I

 
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