MFG200 SCR-module DATASHEET

MFG200 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum average on-state current (I_T(AVR)): 50 A
   Non repetitive surge peak on-state current (I_TSM): 1200 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.48 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 100 mA

 

MFG200 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MFG200 Datasheet

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Description

MFG200 MFY200 Thyristor/Diode Modules(Non-isolated Type) Features：  Non-Isolated.Mounting base as common  Pressure contact technology with IT(AV) 200 A Incrtased power cycling capability VDRM/VRRM 800~1800 V  Low on-state voltage drop Typical Applications ITSM 5.2A×103  Welding Power Supply I2t 135 A2 S*103  Various DC Power supplies  DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180