MHC200 SCR-module Spec

MHC200 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum average on-state current (I_T(AVR)): 75 A
   Non repetitive surge peak on-state current (I_TSM): 1600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..115 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.2 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 100 mA

 

MHC200 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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MHC200 Spec

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Description

MHC200 MHA200 MHK200 MHX200 Fast Turn-off Thyristor/Fast recovery diode Modules Features：  Isolated mounting base 2500V~  Pressure contact technology with IT(AV) 200 A Incrtased power cycling capability VDRM /VRRM 600~1600 V  Space and weight savings Typical Applications ITSM 4.8 A×103  Inverter I2t 115 A2 S*103  Inductive heating  Chopper VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sine wave 50Hz IT(