MSS50-800 SCR-module DATASHEET

MSS50-800 ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 110 A

MSS50-800 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

MSS50-800 Datasheet

Page #1

Page #2

Description

SEMICONDUCTORS MSS40 / MSS50 Series BACK TO BACK SCR MODULE The MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity. They are suitable for high power applications. The compactness of the SOT-227 package allows high power density and optimized power bus connections. Compliance to RoHS. SOT-227 MAIN FEATURES • IT(RMS) : 55 and 70 A • VDRM/VRRM : 800 and 1200 V • IGT : 50 mA 1 : Thyristor 2 Anode (A2) 2 : T

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. MSS50-800 Datasheet