MSTC90-08 SCR-module DATASHEET

MSTC90-08 ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum average on-state current (I_T(AVR)): 1000 A
   Non repetitive surge peak on-state current (I_TSM): 28000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.05 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.95 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 200 mA

MSTC90-08 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

MSTC90-08 Datasheet

Page #1

Page #2

Description

MSTC90 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 90Amp Applications Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit Features 6 7 International standard package 1 2 3 MSTC High Surge Capability Glass passivated chip 5 Simple Mounting 4 Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC90-08 800V 900V MSTC90-12 1200

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. MSTC90-08 Datasheet