All Transistors. SCR. MTG50 Datasheet

 

MTG50 SCR-module DATASHEET

MTG50 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum average on-state current (IT(AVR)): 1200 A
   Non repetitive surge peak on-state current (ITSM): 34000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 800 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.03 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 1.76 V
   Triggering gate current (IGT): 200 mA
   Holding current (IH): 200 mA

 

MTG50 Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MTG50 Datasheet

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MTG50
 datasheet

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MTG50
 datasheet #2

Description

MTG50 MTY50 Thyristor Modules(Non-isolated Type) Features:  Non-Isolated.Mounting base as common  Pressure contact technology with IT(AV) 50 A Incrtased power cycling capability VDRM/VRRM 800~1800 V  Low on-state voltage drop Typical Applications ITSM 1.2 A×103  Welding Power Supply I2t 7.2 A2 S*103  Various DC Power supplies  DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sin

 
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