NTE5381 SCR DATASHEET

NTE5381 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 30 V
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 200 K/W
   Junction to case thermal resistance (R_TH(j-c)): 5 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 0.05 mA
   Holding current (I_H): 5 mA

Package: TO‑92

 

NTE5381 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5381 Datasheet

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Description

NTE5381 Silicon Controlled Rectifier (SCR) for High Speed Switching, 1200V, 400 Amp, TO200AB Features: D High di/dt with Soft Gate Control D High Frequency Operation D Low Dynamic Forward Voltage Drop D Low Switching Losses at High Frequency Applications: D Inverters for UPS, Induction Heating, and Motor Control D Choppers D Crowbars Voltage: Blocking State Maximums (TJ = +125°C, Note 1 unless otherwise specified) Repetitive Peak Forward Blocking Voltage, VDRM . . . . . . . . .