NTE5387 SCR DATASHEET
NTE5387 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 40 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 35 A
Maximum RMS on-state current (IT(RMS)): 55 A
Non repetitive surge peak on-state current (ITSM): 550 A
Critical repetitive rate of rise of on-state current (dI/dt): 175 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.5 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 40 mA
Holding current (IH): 60 mA
Package: TO‑220
NTE5387 Datasheet
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Description
NTE5386 & NTE5387 Silicon Controlled Rectifier (SCR) for High Speed Switching, 700 Amp, TO200AC Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |