NTE54001 SCR DATASHEET

NTE54001 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 40 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum average on-state current (I_T(AVR)): 35 A
   Maximum RMS on-state current (I_T(RMS)): 55 A
   Non repetitive surge peak on-state current (I_TSM): 550 A
   Critical repetitive rate of rise of on-state current (dI/dt): 175 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.5 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 40 mA
   Holding current (I_H): 60 mA

Package: TO‑220

 

NTE54001 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE54001 Datasheet

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Description

NTE54000 thru NTE54004 Silicon Controlled Rectifier (SCR) 55 Amp, TO220 Description: The NTE54000 thru NTE54004 are half-wave, unidirectional, gate-controlled silicon controlled rectifiers (SCR) packaged in a TO220 type case featuring glass-passivated junctions to ensure long- term reliability and perimeter stability. Features: D High Voltage Capability D High Surge Capability D Glass-Passivated Chip Absolute Maximum Ratings: (TA = +25°C, 60Hz with a resistive load unless otherwis