All Transistors. SCR. NTE5408 Datasheet

 

NTE5408 SCR DATASHEET

NTE5408 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 30 V
   Maximum average on-state current (IT(AVR)): 2.6 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 1 V
   Peak on-state voltage drop (VTM): 2.2 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 5 mA

Package: TO‑225

 

NTE5408 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5408 Datasheet

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NTE5408
 datasheet

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NTE5408
 datasheet #2

Description

NTE5408 thru NTE5410 Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate, TO5 Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void-free glass-passivated chips and are hermeti- cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200µA. These NTE SCRs are reverse-blocking triode thyristors and may be switched from o

 
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