All Transistors. SCR. NTE5427 Datasheet

 

NTE5427 SCR DATASHEET

NTE5427 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 5 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 5.1 A
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 80 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Junction to case thermal resistance (RTH(j-c)): 4 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.95 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 10 mA

Package: TO‑220

 

NTE5427 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5427 Datasheet

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NTE5427
 datasheet

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NTE5427
 datasheet #2

Description

NTE5427 thru NTE5429 Silicon Controlled Rectifier (SCR) 7 Amp, TO5 Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . .

 
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