NTE5437 SCR DATASHEET
NTE5437 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 5 W
Maximum repetitive peak and off-state voltage (VDRM): 50 V
Maximum average on-state current (IT(AVR)): 5.1 A
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 80 A
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..100 °C
Junction to ambient thermal resistance (RTH(j-a)): 40 K/W
Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
Triggering gate voltage (VGT): 0.75 V
Peak on-state voltage drop (VTM): 1 V
Triggering gate current (IGT): 7 mA
Holding current (IH): 6 mA
Package: TO‑127
NTE5437 Datasheet
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Description
NTE5437 & NTE5438 Silicon Controlled Rectifier (SCR) 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off-State Voltage (TJ = -40° to +125°C, RGK = 1kΩ), VDRM, VRRM NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |