All Transistors. SCR. NTE5437 Datasheet

 

NTE5437 SCR DATASHEET

NTE5437 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 5 W
   Maximum repetitive peak and off-state voltage (VDRM): 50 V
   Maximum average on-state current (IT(AVR)): 5.1 A
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 80 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..100 °C
   Junction to ambient thermal resistance (RTH(j-a)): 40 K/W
   Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
   Triggering gate voltage (VGT): 0.75 V
   Peak on-state voltage drop (VTM): 1 V
   Triggering gate current (IGT): 7 mA
   Holding current (IH): 6 mA

Package: TO‑127

 

NTE5437 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5437 Datasheet

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NTE5437
 datasheet

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NTE5437
 datasheet #2

Description

NTE5437 & NTE5438 Silicon Controlled Rectifier (SCR) 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off-State Voltage (TJ = -40° to +125°C, RGK = 1kΩ), VDRM, VRRM NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 
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