NTE5438 SCR DATASHEET

NTE5438 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum average on-state current (I_T(AVR)): 5.1 A
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 40 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.5 K/W
   Triggering gate voltage (V_GT): 0.75 V
   Peak on-state voltage drop (V_TM): 1 V
   Triggering gate current (I_GT): 7 mA
   Holding current (I_H): 6 mA

Package: TO‑127

 

NTE5438 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5438 Datasheet

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Description

NTE5437 & NTE5438 Silicon Controlled Rectifier (SCR) 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off-State Voltage (TJ = -40° to +125°C, RGK = 1kΩ), VDRM, VRRM NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .