NTE5444 SCR DATASHEET

NTE5444 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 30 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 8 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to case thermal resistance (R_TH(j-c)): 5 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 0.05 mA
   Holding current (I_H): 3 mA

Package: TO‑202

 

NTE5444 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5444 Datasheet

Page #1

Page #2

Description

NTE5442 thru NTE5448 Silicon Controlled Rectifier (SCR) 8 Amp, TO127 Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de- signed for high-volume consumer phase-control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regula- tors, vending machines, and lamp drivers. Features: D Small, Rugged Construction D Practical Level Triggering