All Transistors. SCR. NTE5448 Datasheet

 

NTE5448 SCR DATASHEET

NTE5448 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 100 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 8 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..100 °C
   Junction to case thermal resistance (RTH(j-c)): 5 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 2.2 V
   Triggering gate current (IGT): 0.05 mA
   Holding current (IH): 3 mA

Package: TO‑202

 

NTE5448 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5448 Datasheet

Page #1

NTE5448
 datasheet

Page #2

NTE5448
 datasheet #2

Description

NTE5442 thru NTE5448 Silicon Controlled Rectifier (SCR) 8 Amp, TO127 Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de- signed for high-volume consumer phase-control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regula- tors, vending machines, and lamp drivers. Features: D Small, Rugged Construction D Practical Level Triggering

 
Back to Top