NTE5458 SCR Spec

NTE5458 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 16 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 10 A
   Non repetitive surge peak on-state current (I_TSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to case thermal resistance (R_TH(j-c)): 2 K/W
   Triggering gate voltage (V_GT): 0.9 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 8 mA
   Holding current (I_H): 10 mA

Package: TO‑220

 

NTE5458 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5458 Spec

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Description

NTE5452 thru NTE5458 Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse-blocking triode thyristors may be switched from off-state to conduction by a current pulse applied to the gate terminal. They are de- signed for control applications in lighting, heating, cooling, and static switching relays. Absolute Ma