NTE5463 SCR DATASHEET

NTE5463 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 16 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 10 A
   Non repetitive surge peak on-state current (I_TSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to case thermal resistance (R_TH(j-c)): 2 K/W
   Triggering gate voltage (V_GT): 0.9 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 8 mA
   Holding current (I_H): 10 mA

Package: TO‑220

 

NTE5463 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5463 Datasheet

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Description

NTE5461 thru NTE5468 Silicon Controlled Rectifier (SCR) 10 Amp, TO220 Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half- wave AC control applications such as motor controls, heating controls, and power supplies; or wher- ever half-wave silicon gate-controlled, solid-state devices are needed. These devices are supplied in a TO220 type package. Features; D Glass Passivated Junctions and Center Gate Fire for Greater Parameter U