NTE5475 SCR DATASHEET

NTE5475 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 50 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 1.5 K/W
   Triggering gate voltage (V_GT): 0.75 V
   Peak on-state voltage drop (V_TM): 1.4 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 10 mA

Package: TO‑208AB

 

NTE5475 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5475 Datasheet

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Description

NTE5470 thru 5476 Silicon Controlled Rectifier (SCR) 5 Amp, TO64 Description: The NTE5470 through NTE5476 are multi-purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: D Uniform Low-Level Noise-Immune Gate Triggering D Low Forward “ON” Voltage D High Surge-Current Capability Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified) Peak Repetitive Forward an