NTE5491 SCR DATASHEET

NTE5491 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 10 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 7.6 A
   Maximum RMS on-state current (I_T(RMS)): 12 A
   Non repetitive surge peak on-state current (I_TSM): 120 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 40 mA

Package: TO‑220

 

NTE5491 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5491 Datasheet

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Description

NTE5491 thru NTE5496 Silicon Controlled Rectifier (SCR) 10 Amp, TO48 Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half-wave AC control applications such as motor controls, heating controls, power supplies, or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features: D Glass-Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Blocking Voltage to 600 Volts Absolute