NTE5499 SCR DATASHEET

NTE5499 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum average on-state current (I_T(AVR)): 16 A
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 200 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -65..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.1 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 20 mA

Package: TO‑208AA

 

NTE5499 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5499 Datasheet

Page #1

Page #2

Description

NTE5498 & NTE5499 Silicon Controlled Rectifier (SCR) 12 Amp, TO220 Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Peak Repetitive Off-State Voltage (TJ = -40° to +125°C, RGK = 1kΩ), VDRM, VRRM NTE5498 . . . . . . . . . . .