NTE5504 SCR DATASHEET
NTE5504 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 5 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 16 A
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 200 A
Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
Junction to case thermal resistance (RTH(j-c)): 1 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.1 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 20 mA
Package: TO‑208AA
NTE5504 Datasheet
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Description
NTE5500 thru NTE5509 Silicon Controlled Rectifier (SCR) 16 Amp, TO48 Description: The NTE5500 thru NTE5509 series of industrial-type silicon controlled rectifiers (SCR) are available in a TO48 style package with a current handling capability to 25 Amps at junction temperatures to +125°C. Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Peak Forward Blocking Voltage, VDRM NTE5500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LIST
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |