NTE5512 SCR DATASHEET

NTE5512 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 20 A
   Non repetitive surge peak on-state current (I_TSM): 200 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..100 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.3 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.9 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 50 mA

 

NTE5512 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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NTE5512 Datasheet

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Description

NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp, TO66 Description: The NTE5511 thru NTE5513 all-diffused, three junction, silicon controlled rectifiers (SCR’s) are in- tended for use in power-control and power-switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C. Features: D Designed Especially for High-Volume System