All Transistors. SCR. NTE5538 Datasheet

 

NTE5538 SCR DATASHEET

NTE5538 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 50 V
   Maximum RMS on-state current (IT(RMS)): 35 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
   Junction to case thermal resistance (RTH(j-c)): 1.4 K/W
   Triggering gate voltage (VGT): 2 V
   Triggering gate current (IGT): 30 mA
   Holding current (IH): 50 mA

Package: TO‑208AA

 

NTE5538 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5538 Datasheet

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NTE5538
 datasheet

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NTE5538
 datasheet #2

Description

NTE5538 Silicon Controlled Rectifier (SCR) 800V, 50 Amp, TO218 Isolated Description: The NTE5538 general purpose SCR is suited for power supplies up to 400Hz on resistive or inductive loads. Applications: D Motor Control D Overvoltage Crowbar Protection D Capacitive Discharge Ignition D Voltage Regulation D Welding Equipment D Capacitive Filter Soft Start (Inrush Current Control) Absolute Maximum Ratings: (TJ = +25°C unless otherwise specified) Peak Forward Blocking Voltage, VD

 
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