NTE5540 SCR DATASHEET

NTE5540 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 300 V
   Maximum RMS on-state current (I_T(RMS)): 35 A
   Non repetitive surge peak on-state current (I_TSM): 300 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.4 K/W
   Triggering gate voltage (V_GT): 2 V
   Triggering gate current (I_GT): 30 mA
   Holding current (I_H): 50 mA

Package: TO‑208AA

 

NTE5540 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5540 Datasheet

Page #1

Page #2

Description

NTE5539 & NTE5540 Silicon Controlled Rectifier (SCR) 55 Amps, TO218 Features: D High Voltage Capability D High Surge Capability D Glass Passivated Chip Electrical Characteristics: (TA = +25°C, 60Hz, Resistive load unless otherwise specified) Repetitive Peak Off-State Forward & Reverse Voltage, VDRM, VRRM NTE5539 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5540 . . . . . . . . . . . . .