NTE5544 SCR DATASHEET
NTE5544 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 35 A
Non repetitive surge peak on-state current (ITSM): 300 A
Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
Junction to case thermal resistance (RTH(j-c)): 1.4 K/W
Triggering gate voltage (VGT): 2 V
Triggering gate current (IGT): 30 mA
Holding current (IH): 50 mA
Package: TO‑208AA
NTE5544 Datasheet
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Description
NTE5541 thru NTE5548 Silicon Controlled Rectifier (SCR) 35 Amp, TO48 Description: The NTE5541 thru NTE5548 are silicon controlled rectifiers (SCR) packaged in a TO48 type case designed for industrial and consumer applications such as power supplies; battery chargers; temper- ature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = +100C) VDRM NTE5541 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |