All Transistors. SCR. NTE5546 Datasheet

 

NTE5546 SCR DATASHEET

NTE5546 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 50 V
   Maximum average on-state current (IT(AVR)): 16 A
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.5 K/W
   Triggering gate voltage (VGT): 1 V
   Peak on-state voltage drop (VTM): 1.8 V
   Triggering gate current (IGT): 40 mA
   Holding current (IH): 35 mA

Package: TO‑220

 

NTE5546 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5546 Datasheet

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NTE5546
 datasheet

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NTE5546
 datasheet #2

Description

NTE5541 thru NTE5548 Silicon Controlled Rectifier (SCR) 35 Amp, TO48 Description: The NTE5541 thru NTE5548 are silicon controlled rectifiers (SCR) packaged in a TO48 type case designed for industrial and consumer applications such as power supplies; battery chargers; temper- ature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = +100C) VDRM NTE5541 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 
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