NTE5554-I SCR DATASHEET
NTE5554-I ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 16 A
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 320 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 1.9 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 40 mA
Holding current (IH): 50 mA
Package: TO‑220F
NTE5554-I Datasheet
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Description
NTE5552-I, NTE5554-I, NTE5556-I Silicon Controlled Rectifier (SCR) 25 Amp, TO220AB Isolated Tab Description: The NTE5552-I thru NTE5556-I are 25 Amp SCR’s designed primarily for half-wave AC control applications, such as motor controls, overvoltage crowbar protection, capacitive discharge ignition, voltage regulation, and welding equipment. Features: D Suitable for General Purpose AC Switching D IGT 40mA Max. D Isolated Tab Absolute Maximum Ratings: (TA = +25_C unless otherwise
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |