NTE5556-I SCR DATASHEET

NTE5556-I ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum peak gate power (P_GM): 120 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 820 A
   Maximum RMS on-state current (I_T(RMS)): 1640 A
   Non repetitive surge peak on-state current (I_TSM): 11500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.04 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 1000 mA

Package: TO‑200AC

NTE5556-I Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

NTE5556-I Datasheet

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Description

NTE5552-I, NTE5554-I, NTE5556-I Silicon Controlled Rectifier (SCR) 25 Amp, TO220AB Isolated Tab Description: The NTE5552-I thru NTE5556-I are 25 Amp SCR’s designed primarily for half-wave AC control applications, such as motor controls, overvoltage crowbar protection, capacitive discharge ignition, voltage regulation, and welding equipment. Features: D Suitable for General Purpose AC Switching D IGT 40mA Max. D Isolated Tab Absolute Maximum Ratings: (TA = +25_C unless otherwise

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Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. NTE5556-I Datasheet