NTE5558 SCR DATASHEET

NTE5558 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 120 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 1400 A
   Maximum RMS on-state current (I_T(RMS)): 2840 A
   Non repetitive surge peak on-state current (I_TSM): 20500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.03 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.41 V
   Triggering gate current (I_GT): 300 mA
   Holding current (I_H): 1000 mA

 

NTE5558 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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NTE5558 Datasheet

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Description

NTE5550 thru NTE5558 Silicon Controlled Rectifier (SCR) 25 Amp, TO220 Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half-wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: D Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability. D Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability. D Blocking Voltage