All Transistors. SCR. NTE5562 Datasheet

 

NTE5562 SCR DATASHEET

NTE5562 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 35 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
   Junction to case thermal resistance (RTH(j-c)): 1.6 K/W
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 30 mA
   Holding current (IH): 50 mA

Package: TO‑208AA

 

NTE5562 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5562 Datasheet

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NTE5562
 datasheet

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NTE5562
 datasheet #2

Description

NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR) 35 Amp, TO48 Isolated Stud Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO-48 isolated stud TO-48 type package designed for industrial and consumer applications such as power supplies, bat- tery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5562 . . . . . . . . . . .

 
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