NTE5563 SCR Spec
NTE5563 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 2.5 W
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum average on-state current (IT(AVR)): 50 A
Maximum RMS on-state current (IT(RMS)): 80 A
Non repetitive surge peak on-state current (ITSM): 1430 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 200 mA
Package: TO‑208AC
NTE5563 Spec
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Description
NTE5563 Silicon Controlled Rectifier (SCR) 1600V, 1880 Amp, 2.9” Dia Hockey Puck Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VRRM, VDRM, VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Non-Repetitive Peak Reverse Blocking Voltage, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Average On-State Current (Half Sine Wave), IT(AV) Ths = +55°C (Double Side Cooled)


