NTE5568 SCR DATASHEET
NTE5568 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 2.5 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 50 A
Maximum RMS on-state current (IT(RMS)): 80 A
Non repetitive surge peak on-state current (ITSM): 1200 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
Peak on-state voltage drop (VTM): 1.78 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 200 mA
Package: TO‑208AC
NTE5568 Datasheet
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Description
NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) 80 Amp (IT(RMS)), TO65 (TO208AC) Features: D High Current Rating D Excellent Dynamic Characteristics D Superior Surge Capabilities D Standard Package Voltage Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Maximum Repetitive Peak Forward and Reverse Voltage (Note 1), VDRM, VRRM NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LIST
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |