NTE5571 SCR Spec
NTE5571 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum average on-state current (IT(AVR)): 70 A
Maximum RMS on-state current (IT(RMS)): 125 A
Non repetitive surge peak on-state current (ITSM): 1400 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.3 K/W
Triggering gate voltage (VGT): 0.2 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 125 mA
Package: TO‑83
NTE5571 Spec
Page #1
Page #2
Description
NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) 80 Amp (IT(RMS)), TO65 (TO208AC) Features: D High Current Rating D Excellent Dynamic Characteristics D Superior Surge Capabilities D Standard Package Voltage Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Maximum Repetitive Peak Forward and Reverse Voltage (Note 1), VDRM, VRRM NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


