All Transistors. SCR. NTE5571 Datasheet

 

NTE5571 SCR DATASHEET

NTE5571 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum average on-state current (IT(AVR)): 70 A
   Maximum RMS on-state current (IT(RMS)): 125 A
   Non repetitive surge peak on-state current (ITSM): 1400 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.3 K/W
   Triggering gate voltage (VGT): 0.2 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 125 mA

Package: TO‑83

 

NTE5571 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5571 Datasheet

Page #1

NTE5571
 datasheet

Page #2

NTE5571
 datasheet #2

Description

NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) 80 Amp (IT(RMS)), TO65 (TO208AC) Features: D High Current Rating D Excellent Dynamic Characteristics D Superior Surge Capabilities D Standard Package Voltage Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Maximum Repetitive Peak Forward and Reverse Voltage (Note 1), VDRM, VRRM NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 
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