NTE5577 SCR Spec
NTE5577 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum average on-state current (IT(AVR)): 150 A
Maximum RMS on-state current (IT(RMS)): 275 A
Non repetitive surge peak on-state current (ITSM): 3200 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.14 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 150 mA
Package: TO‑209AB
NTE5577 Spec
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Description
NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier (SCR) 125 Amp, TO83 Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5577 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5579 . . . . . . . . . . . . . . . . . . .


