NTE5586 SCR Spec

NTE5586 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 16 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 350 A
   Maximum RMS on-state current (I_T(RMS)): 550 A
   Non repetitive surge peak on-state current (I_TSM): 9100 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 300 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.1 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.4 V
   Triggering gate current (I_GT): 150 mA

Package: TO‑209AE

 

NTE5586 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5586 Spec

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Description

NTE5586 Silicon Controlled Rectifier (SCR) 600V, 360 Amps, TO93 Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Non-Repetitive Peak Reverse Blocking Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average On-State Current (180° Conduction, Half Sine Wave, TC = +85°C), IT(AV) . . . . . . . . . 230A