All Transistors. SCR. NTE5592 Datasheet

 

NTE5592 SCR DATASHEET

NTE5592 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 120 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum average on-state current (IT(AVR)): 820 A
   Maximum RMS on-state current (IT(RMS)): 1640 A
   Non repetitive surge peak on-state current (ITSM): 11500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 200 mA
   Holding current (IH): 1000 mA

Package: TO‑200AC

 

NTE5592 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5592 Datasheet

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NTE5592
 datasheet

Page #2

NTE5592
 datasheet #2

Description

NTE5590, NTE5591, NTE5592, NTE5597 Silicon Controlled Rectifier (SCR) 470 Amp, TO200AB Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VRRM, VDRM, VDSM NTE5590 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5591 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

 
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