NTE5597 Triac Spec
NTE5597 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 10 W
Maximum repetitive peak and off-state voltage (VDRM): 25 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 30 A
Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
Junction to case thermal resistance (RTH(j-c)): 3.5 K/W
Triggering gate voltage (VGT): 1.4 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 30 mA
Holding current (IH): 30 mA
Package: TO‑225
NTE5597 Spec
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Description
NTE5590, NTE5591, NTE5592, NTE5597 Silicon Controlled Rectifier (SCR) 470 Amp, TO200AB Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VRRM, VDRM, VDSM NTE5590 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5591 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V


