NTE5598 Triac DATASHEET
NTE5598 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum RMS on-state current (IT(RMS)): 15 A
Non repetitive surge peak on-state current (ITSM): 150 A
Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 40 mA
Package: TO‑220
NTE5598 Datasheet
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Description
NTE5598 & NTE5599 Silicon Controlled Rectifier (SCR) 1800 Amp RMS, 2.9” Dia. Hockey Puck Features: D Low On-State Voltage D High di/dt Capability D High dv/dt Capability D Excellent Surge and I2t Ratings Applications: D Power Supplies D Motor Control Absolute Maximum Ratings: Repetitive Peak Voltages, VRRM, VDRM NTE5598 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5599 . . . . . .
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |