All Transistors. SCR. NTE5599 Datasheet

 

NTE5599 Triac DATASHEET

NTE5599 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 15 A
   Non repetitive surge peak on-state current (ITSM): 150 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 2 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 50 mA
   Holding current (IH): 40 mA

Package: TO‑220

 

NTE5599 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5599 Datasheet

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NTE5599
 datasheet

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NTE5599
 datasheet #2

Description

NTE5598 & NTE5599 Silicon Controlled Rectifier (SCR) 1800 Amp RMS, 2.9” Dia. Hockey Puck Features: D Low On-State Voltage D High di/dt Capability D High dv/dt Capability D Excellent Surge and I2t Ratings Applications: D Power Supplies D Motor Control Absolute Maximum Ratings: Repetitive Peak Voltages, VRRM, VDRM NTE5598 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5599 . . . . . .

 
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