NTE5604 Triac DATASHEET
NTE5604 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 10 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 30 A
Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
Junction to case thermal resistance (RTH(j-c)): 3.5 K/W
Triggering gate voltage (VGT): 1.4 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 30 mA
Holding current (IH): 30 mA
Package: TO‑225
NTE5604 Datasheet
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Description
NTE5600 thru NTE5607 TRIAC, 4 Amp Description: The NTE5600 through NTE5607 TRIACs are designed primarily for full–wave AC control applications such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: D 2 Mode Gate Trigger
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |