NTE5606 Triac DATASHEET

NTE5606 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 10 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.85 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 10 mA

Package: TO‑220

 

NTE5606 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5606 Datasheet

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Description

NTE5600 thru NTE5607 TRIAC, 4 Amp Description: The NTE5600 through NTE5607 TRIACs are designed primarily for full–wave AC control applications such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: D 2 Mode Gate Trigger