All Transistors. SCR. NTE5608 Datasheet

 

NTE5608 Triac DATASHEET

NTE5608 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 15 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 40 A
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to case thermal resistance (RTH(j-c)): 4 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 3 mA
   Holding current (IH): 5 mA

Package: TO‑202

 

NTE5608 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5608 Datasheet

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NTE5608
 datasheet

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NTE5608
 datasheet #2

Description

NTE5608 thru NTE5610 TRIAC 8 Amp Description: The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM NTE5608 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 
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