All Transistors. SCR. NTE5610 Datasheet

 

NTE5610 Triac DATASHEET

NTE5610 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 10 W
   Maximum repetitive peak and off-state voltage (VDRM): 100 V
   Maximum RMS on-state current (IT(RMS)): 10 A
   Non repetitive surge peak on-state current (ITSM): 110 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 50 mA
   Holding current (IH): 50 mA

Package: TO‑220

 

NTE5610 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5610 Datasheet

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NTE5610
 datasheet

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NTE5610
 datasheet #2

Description

NTE5608 thru NTE5610 TRIAC 8 Amp Description: The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM NTE5608 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 
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