NTE5629 Triac DATASHEET

NTE5629 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 10 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 10 A
   Non repetitive surge peak on-state current (I_TSM): 110 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.5 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 50 mA

Package: TO‑220

 

NTE5629 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

NTE5629 Datasheet

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Description

NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Volt