All Transistors. SCR. NTE5635 Datasheet

 

NTE5635 Triac DATASHEET

NTE5635 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 80 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
   Triggering gate voltage (VGT): 2.2 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 10 mA
   Holding current (IH): 25 mA

Package: TO‑220F

 

NTE5635 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

NTE5635 Datasheet

Page #1

NTE5635
 datasheet

Page #2

NTE5635
 datasheet #2

Description

NTE5631 thru NTE5637 TRIAC – 10 Amp Description: The NTE5631 through NTE5637 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM NTE5631 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 
Back to Top